Presentation Information
[20a-P02-11]Study on crystallization mechanism of amorphous Ga2O3 films
deposited by RF sputtering
〇(M1C)Risa Nakamura1, Junjun Jia2, Ayaka Fukuchi1, Eisuke Magome3, Tetsuaki Nishida4, Nobuto Oka1 (1.Kindai Univ., 2.Waseda Univ., 3.SAGA Light Source, 4.Environmental Materials Inst.)
Keywords:
RF sputtering,Ga2O3