Presentation Information
[20a-P02-2]Effects of Epitaxial Strain on Nonlinear Transport Properties in Ca2RuO4 Thin Films with a Current–Driven Metal–Insulator Transition
〇Keiji Tsubaki1, Atsushi Tsurumaki-Fukuchi1, Masashi Arita1, Takayoshi Katase2, Toshio Kamiya2, Yasuo Takahashi1 (1.IST, Hokkaido Univ., 2.MDX ES, Tokyo Tech.)
Keywords:
metal-insulator transition,Ca2RuO4,mott memory
Recently, nonlinear transport phenomena in the metal-insulator transition such as negative differential resistance and resistive switching have been explored as a new principle to develop neuromorphic functionality, a precise control of nonlinear transport is essential. Layered perovskite Ca2RuO4 is a candidate for current-induced metal-insulator transition, expected to provide precise control due to its direct electronic state control mechanism. Especially since a strong dependence on lattice deformation has been reported for its transition mechanism, it is expected to open up a novel method for controlling nonlinear transport through epitaxial strain by thin film fabrication. In this study, Ca2RuO4 epitaxial films were fabricated on various substrates and the effect of strain on the nonlinear transport was investigated. As a result, nonlinear transport is strongly suppressed by epitaxial strain, which provides a new control parameter for future device applications.