[20p-A201-1~16] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[20p-A201-5] Photonic Matrix Multiplication using Low-insertion-loss and Non-volatile Ge₂Sb₂Te₃S₂ Intensity Modulators

〇(D)Yuto Miyatake¹, Rui Tang¹, Kotaro Makino², Junji Tominaga², Noriyuki Miyata², Makoto Okano², Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo, 2.AIST)

Keywords:

Si photonics,phase change material,photonic integrated citcuits

Recently, we have proposed a new photonic matrix multiplication circuit using two-layer waveguides as a programmable photonic integrated circuit that combines ease of programming and high fabrication error tolerance. In this study, we experimentally demonstrated the proposed photonic circuit using intensity modulators with the newly developed phase-change material Ge2Sb2Te3S2 (GSTS), and performed 4×4 matrix calculations. Based on the experimental results, we simulated the inference calculations of a convolutional neural network and numerically demonstrated its ability to perform inference with high accuracy.