Presentation Information
[20p-A301-2]Electron emperature in double well quantum cascade cooling structures (Ⅱ)
〇Xiangyu Zhu1, Gueric Etesse2, Chloe Salhani1, Marc Bescond1,2, Francesca Carosella3, Gerald Bastard3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure)
Keywords:
semiconductor,quantum well,thermionic cooling
Managing rapid increase in thermal power densities associated with device miniaturization is a major technological challenge. Development of new efficient cooling technologies is therefore urgently required for future progress in electronics. Solid-state cooling devices can be one answer, owing to their high efficiency and compatibility for integration. To achieve efficient cooling, we have been working on semiconductor double barrier heterostructures to utilize the thermionic cooling effect [1,2].
In this work, we have studied a double quantum well (QW) structure as a model for the quantum cascade cooling (QCC) structure. The structure consists of two 5 nm-thick AlxGa1-xAs QWs with different Al compositions (x = 0.1 for QW1 and x = 0.2 for QW2) sandwiched by Al0.35Ga0.65As or Al0.7Ga0.3As barriers (see Fig. 1(a), (c)). As an electron cascades through the double QW structure, it can absorb multiple phonons, which can improve the cooling efficiency, when compared with single QW structure.
In this work, we have studied a double quantum well (QW) structure as a model for the quantum cascade cooling (QCC) structure. The structure consists of two 5 nm-thick AlxGa1-xAs QWs with different Al compositions (x = 0.1 for QW1 and x = 0.2 for QW2) sandwiched by Al0.35Ga0.65As or Al0.7Ga0.3As barriers (see Fig. 1(a), (c)). As an electron cascades through the double QW structure, it can absorb multiple phonons, which can improve the cooling efficiency, when compared with single QW structure.