Session Details
[20p-A301-1~18]13.6 Nanostructures, quantum phenomena, and nano quantum devices
Wed. Sep 20, 2023 1:00 PM - 6:45 PM JST
Wed. Sep 20, 2023 4:00 AM - 9:45 AM UTC
Wed. Sep 20, 2023 4:00 AM - 9:45 AM UTC
A301 (KJ Hall)
Toshihiro Nakaoka(Sophia Univ.), Yukihiro Harada(Kobe Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.), Kazuhiko Hirakawa(The Univ. of Tokyo)
[20p-A301-1][Fellow International 2023 Special Lecture] Using Quantum states in semiconductor heterostructures for Applications
〇Gerald Bastard1 (1.Ecole Normale Superieure)
[20p-A301-2]Electron emperature in double well quantum cascade cooling structures (Ⅱ)
〇Xiangyu Zhu1, Gueric Etesse2, Chloe Salhani1, Marc Bescond1,2, Francesca Carosella3, Gerald Bastard3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure)
[20p-A301-3]Terahertz quantum cascade lasers towards room-temperature operation
〇WANG LI1, Ming-xi Chen1, Tsung-Tse Lin1, Ke Wang1, Hideki Hirayama1 (1.RIKEN)
[20p-A301-4]Demonstration of vertical light-emitting diodes using wurtzite InP/AlInP core-multishell nanowires
〇ZIYE ZHENG1,2, Shun Kimura1,2, Junichi Motohisa1,2, Katsuhiro Tomioka1,2 (1.Hokkaido Univ, 2.RCIQE)
[20p-A301-5]Optical responses of ion-exchanged nanodisk superlattices revealed by polarization-resolved microscopy
〇takumi yamada1, Hirokazu Tahara2, Masaaki Saruyama1, Toshiharu Teranishi1, Yoshihiko Kanemitsu1 (1.ICR, Kyoto Univ., 2.Hakubi Center, Kyoto Univ.)
[20p-A301-6]External electric field control of photoluminescence of single lead halide perovskite nanocrystals
〇Kenichi Cho1, Hirokazu Tahara1,2, Takumi Yamada1, Ryota Sato1, Masaki Saruyama1, Toshiharu Teranishi1, Yoshihiko Kanemitsu1 (1.ICR, Kyoto Univ., 2.The Hakubi Center for Advanced Research, Kyoto Univ.)
[20p-A301-7]Electron spin transport to InAs quantum dots using dilute nitride GaNAs/GaAs superlattice barrier
〇Masayoshi Hosoe1, Sino Sato1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
[20p-A301-8]Optical spin dynamics of InAs quantum dots tunnel-coupled with dilute nitride GaNAs quantum well with different thicknesses
〇Shino Sato1, Masayoshi Hosoe1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
[20p-A301-9]Ultrafast Uniformed Quantum Manipulation using Chirped Pulses in InAs Quantum Dot Ensemble with Resonator
〇Yushiro Takahashi1,2, Yutaro Kinoshita1,2, Kouichi Akahane3, Junko Ishi-Hayase1,2 (1.Keio Univ., 2.Keio CSRN, 3.NICT)
[20p-A301-10]Nuclear quadrupolar effect on in-plane nuclear field formation investigated by time-resolved Hanle measurements
〇Reina Kaji1, Sota Yamamoto1, Satoru Adachi1 (1.Hokkaido Univ.)
[20p-A301-11]Enhanced Infrared Absorption by Localized Surface Plasmon Resonance in Highly Doped InAs/GaAs Quantum Dots
〇Mizuto Kawakami1, Yukihiro Harada1, Shigeo Asahi1, Takashi Kita1 (1.Kobe Univ.)
[20p-A301-12]Terahertz wave radiation originating from the coexistence of different photoexcited transients in InP substrates
〇(M2)Kaisei Masuda1, Takayuki Hasegawa1, Akira Fujimoto1, Yoshiyuki Harada1, Masatoshi Koyama1, Toshihiko Maemoto1 (1.Osaka Inst. Technol.)
[20p-A301-13]Effects of free carriers on terahertz-wave absorption in a GaAs/AlAs multiple quantum well
〇Osamu Kojima1 (1.Chiba Inst. Tech.)
[20p-A301-14]Electrical Detection of Ultrastrong Coupling between Two-Dimensional Electrons and a Single Terahertz Optical Resonator by Using a Quantum Point Contact
〇Kazuyuki Kuroyama1, Jinkwan Kwoen2, Yasuhiko Arakawa2, Kazuhiko Hirakawa1,2 (1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo)
[20p-A301-15]Room Temperature Pulse Response Characteristics of Resistance Switching Memory using Si/CaF2 Quadruple-Barrier Resonant Tunneling Structure
〇(M2)Maiko Hoshino1, Ryoya Usami1, Kanta Murakami1, Masahiro Watanabe1 (1.Tokyo Tech.)
[20p-A301-16]Investigation of (0001) surface high resistivity by Cl2 etching in GaInN/GaN multiple quantum shell LEDs using plasma light emission monitoring
〇(M1)Yuta Hattori1, Soma Inaba1, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Kosei Kubota1, Satoshi Kamiyama1, Motoaki Iwaya1, Tetuya Takeuchi1 (1.Meijo Univ.)
[20p-A301-17]Fabrication and characterization of Janus MoSSe monolayers by thermal treatment
〇Takahiko Endo1, Tomoya Ogawa1, Kazuki Hashimoto1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Nakanishi1, Yasumitsu Miyata1 (1.Tokyo Metro. Univ., 2.NIMS)
[20p-A301-18]Selective-area growth of InAs nanowires on SOI substrate and vertical transistor application
〇Yuki Takeda1, Hironori Gamo1, Junichi Motohisa1, Katsuhiro Tomioka1 (1.Hokkaido Univ.)