Presentation Information

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)English Presentation

[20p-A301-4]Demonstration of vertical light-emitting diodes using wurtzite InP/AlInP core-multishell nanowires

〇ZIYE ZHENG^1,2, Shun Kimura^1,2, Junichi Motohisa^1,2, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ, 2.RCIQE)

Keywords:

semiconductor,nanowires

Light emitting-diodes (LEDs) have common light source in display applications. However, there are no alternative candidate materials for yellow LEDs due to the low efficiency.Nitride-related materials have difficulty to realize high quality crystal structure in yellow region while phosphide-related materials have indirect band gap. Wurtzite (WZ)-type phosphide-related III-Vs have recently attracted as alternative LED materials to overcome the issue because crystal phase transition from zincblende (ZB) to WZ could change the bandgap from indirect to direct gap. In this study, we characterized the selective-area growth of WZ InP/AlInP core-multishell (CMS) NWs with radial pn junctions and demonstrated vertical LEDs.

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