[20p-A302-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-A302-13] Temperature Dependence of Kinetic Phase Stability of Selective-Area-Grown α-Ga₂O₃

〇Riena Jinno¹, Susumu Fukatsu¹ (1.UTokyo)

Keywords:

ultra-wide bandgap semiconductor,gallium oxide,structural phase transition