The 84th JSAP Autumn Meeting 2023
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-A302-1~15]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 20, 2023 1:00 PM - 5:00 PM JST
Wed. Sep 20, 2023 4:00 AM - 8:00 AM UTC
A302 (KJ Hall)
Kohei Sasaki(Novel Crystal Technology), Takumi Ikenoue(Kyoto Univ.)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[20p-A302-1]Epitaxial Growth of Ga2O3 Thin Films on MgO Substrate via Mist CVD Method

〇Takumi Ikenoue1,2, Yongjin Cho2, Vladimir Protasenko2, Chandu Savant2, Bennett Cromer2, Masao Miyake1, Tetsuji Hirato1, Mike Thompson2, Debdeep Jena2, Huili Xing2 (1.Kyoto Univ., 2.Cornell Univ.)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A302-2]MESFETs of β-Ga2O3 grown by mist CVD

〇(D)Hitoshi Takane1, Yuji Ando2, Hidemasa Takahashi2, Ryutaro Makisako2, Hikaru Ikeda1, Tetsuzo Ueda3, Jun Suda2, Katsuhisa Tanaka1, Shizuo Fujita1, Hidetaka Sugaya3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A302-3]Ga2O3 Thin Film Formed on NiO Thin Film on (001) β-Ga2O3 Substrate

〇Shinji Nakagomi1 (1.Ishinomaki Senshu)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A302-4]Homoepitaxial growth of β-Ga2O3 on (-102) substrates

Yuichi Oshima1, 〇Takayoshi Oshima1 (1.NIMS)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A302-5]Selective area growth and selective area etching of (−102) β-Ga2O3 substrates

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A302-6]Off-angle dependence of homoepitaxial growth on β-Ga2O3(010) substrate

〇(M2)Kyohei Nitta1, Ken Goto1, Hisashi Murakami2, Yoshinao Kumagai1 (1.Tokyo Univ. Agri. Tech., 2.Tokyo Univ. Agri. Tech. BASE)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[20p-A302-7]Dependence of growth orientation in b-Ga2O3 crystals
grown by crucible free growth methods

〇Isao Takahashi1,2, Kochurikhin Vladimir1, Taketoshi Tomida1, Takamasa Sugawara2, Yasuhiro Shoji1, Kei Kamada1,2, Koichi Kakimoto2, Akira Yoshikawa2,1 (1.C and A corp., 2.Tohoku univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A302-8]Growth of Si-doped (010)β-Ga2O3 layers by HVPE

〇(M2)Mai Tanaka1, Yu Kono1, Ken Goto1, Yoshinao Kumagai1,2 (1.Tokyo Univ. of Agri. and Tech., 2.TUAT FLOuRISH)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A302-9]Growth of α-Ga2O3 thin films with low defect density on Cr2O3 single crystals

〇Morimichi Watanabe1, Kazuto Murakami1, Noboru Nishimura1 (1.NGK INSULATORS, LTD.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A302-10]Fabrication and characterization of conductive α-(AlxGa1-x)2O3 thin films

〇Tatsuya Yasuoka1, T. Giang Dang2, Li Liu2, Kawaharamura Toshiyuki1,2 (1.Sys. Eng., KUT, 2.Res. Ins., KUT)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Highlighted Presentation

[20p-A302-11]Si doping of alpha-Al2O3 grown by molecular beam epitaxy

〇Hironori Okumura1 (1.Univ. of Tsukuba)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-A302-12]Ga2O3 growth on sapphire substrates by cold-wall MOCVD

〇Hironori Okumura1 (1.Univ. of Tsukuba)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-A302-13]Temperature Dependence of Kinetic Phase Stability of Selective-Area-Grown α-Ga2O3

〇Riena Jinno1, Susumu Fukatsu1 (1.UTokyo)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-A302-14]Effects of Nitrogen Radical Irradiation on Electrical Properties of Ga2O3 Schottky Barrier Diodes

〇(M1)Kohki Eguchi1, Shota Sato1, Zhenwei Wang2, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[20p-A302-15]Structural Characterization of Ga2O3 Surfaces Treated by Nitrogen Radical Irradiation

〇(M1)Shoki Taniguchi1, Kura Nakaoka1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
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