[20p-A304-1~8] Emerging functionalities of oxides and chalcogenides in iontronics

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[20p-A304-6] Neuromorphic Devices Using Oxide Heterostructures and Protons

〇Takeaki Yajima¹ (1.Kyushu Univ.)

Keywords:

volatile resistance change,solid state electrochemistry,reservoir

In this study, we focused on "ionic degrees of freedom," which is complementary to electrons, and aimed to realize various functions similar to neural circuits at the device level by using protons with the smallest ionic radius. By electrochemically controlling protons inside oxide heterostructures, we realized a volatile resistance changes and showed that it can be applied to reservoir computing.