[20p-A306-1~12] 17.2 Graphene

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[20p-A306-11] Negative capacitance characteristics of GO/Cu structure

〇(M1)Hikaru Yasunaga¹, Hiroyuki Sakai¹, Shogo Noda¹, Yong Sun¹ (1.Kyuko Inst.)

Keywords:

negative capacitance,graphene oxide

Negative capacitance is currently attracting attention in improving the performance of capacitors and transistors. However, the negative capacitance phenomenon has been observed only in some ferroelectrics. In this study, we confirmed that the negative capacitance phenomenon occurs when a gap exists between the graphene oxide (GO) material and Cu electrode. In order to investigate the principle of the negative capacitance, the AC characteristics of the GO/Cu structure were measured while changing the distance between the GO and Cu electrode. Our results suggested that the flowing tunnel current is one of the causes of the negative capacitance.