Presentation Information
[20p-A306-12]Fabrication of graphene devices using vacuum-heated catalytic microstructures
〇(M2)Tatsuya Kataoka1, Agus Subagyo1, Makoto Satou1, Makoto Owada1, Fujiya Yoshino1, Eiji Hatta1, Kazuhisa Sueoka1 (1.Hokkaido Univ.)
Keywords:
graphene
The performance of graphene devices and systems depends on the junction properties between graphene and metals. Achieving low resistance and reproducible graphene-metal junctions is crucial for the realization of graphene electronics. Various junction formation techniques and metal materials have been developed, but there is variability in junction resistance and no established technique. In the process of fabricating graphene devices, residue and contamination from the transfer and processing of graphene on metal substrates contribute to high junction resistance, necessitating a residue-free process. One applied technique is the metal-induced crystallization phenomenon, where graphene can be grown by heating a Ni/C bilayer film. The utility of this residue-free device fabrication process utilizing the phenomenon has been investigated, demonstrating the potential for achieving low junction resistance. Sample fabrication involved patterning Ni/C thin films using electron beam lithography and growing graphene through vacuum heating. Evaluation results will be reported on the day of presentation.