[20p-A306-1~12] 17.2 Graphene

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A306-9] Evaluation of electrical properties in graphene - n-type SiC junction

〇Hideyo Yokome¹, Yasuhide Ohno¹, Masao Nagase¹ (1.Tokushima Univ.)

Keywords:

graphene,n-type SiC,schottky barrier junction

Graphene-SiC junctions have been confirmed to form Schottky junctions. However, there are many unknowns about the junction of epitaxial graphene and SiC. In this study, the electrical properties of graphene/buffer layer/n-type SiC junctions were investigated using atomic force microscopy (AFM). As a result of the measurements, rectifiability was observed, with a Schottky barrier height of 0.32 eV in the forward direction and a rapid current flow around about 0.5 V in the reverse direction.