[20p-A307-1~9] Discussion on basic science and device application of hybrid perovskites

3:40 PM - 3:55 PM JST(6:40 AM - 6:55 AM UTC)

[20p-A307-6] Efficiency improvement of inverted green perovskite quantum dot light-emitting diodes by reduction of quenching derived from defects on zinc oxides

〇Satoru Ohisa¹, Genichi Motomura¹, Ryosuke Oikawa², Syoki Mizoguchi³, Takayuki Chiba^2,3, Yoshihide Fujisaki¹ (1.NHK STRL, 2.Grad.Yamagata Univ., 3.Yamagata Univ.)

Keywords:

perovskite,LED,quantum dot

We largely improved the efficiency of inverted green perovskite quantum dot light-emitting diodes by two treatment processes: (1) the plasma treatment on zinc oxide surface, and (2) the insertion of organic interlayer between zinc oxide and perovskite quantum dot layers. When using CsPbBr₃ quantum dots, the maximum external quantum efficiency (EQE) was 0.01% for the device without the treatment processes, and 0.7% for the device with the two processes. When using the mixed cation system, the high EQE value of 2.5% at 100 cd/m2 was obtained.