[20p-A309-1~19] 6.1 Ferroelectric thin films

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-A309-6] Epitaxial Stabilization of Ferroelectric Hf_0.5Zr_0.5O₂ via Interfacial Reconstruction

〇Yufan Shen¹, Mitsutaka Haruta¹, Lin I-Ching¹, Daisuke Kan¹, Yuichi Shimakawa¹ (1.Kyoto Univ. ICR)

Keywords:

Ferroelectric thin film,Hafnium oxide

There has been a lot of interest in the ferroelectricity of meta-stable orthorhombic Hf_0.5Zr_0.5O₂ (o-HZO) because of its unique behavior compared to traditional ferroelectric perovskites. Despite its potential practical applications, the stabilization of ferroelectric o-HZO has presented significant difficulties. Epitaxial growth of HZO on the perovskite manganite La_0.67Sr_0.33MnO₃ (LSMO) was shown recently to stabilize the metastable o-HZO without introducing other non-polar phases. However, the mechanism of the o-HZO stabilization on LSMO has not been fully examined yet. In this presentation, we will discuss the stabilization mechanism of this heterostructure, explaining how interfaces assist this unique stabilization.