The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.1 Ferroelectric thin films

[20p-A309-1~19]6.1 Ferroelectric thin films

Wed. Sep 20, 2023 1:00 PM - 6:15 PM JST
Wed. Sep 20, 2023 4:00 AM - 9:15 AM UTC
A309 (KJ Hall)
Takeshi Yoshimura(Osaka Metro. Univ.), Okamoto Kazuki(東工大), Hiroki Matsuo(熊本大)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[20p-A309-1]Direct Measurement of Pyroelectric Effect of in Ferroelectric Thin Films

〇Jun Usami1, Hiroyuki Yamada1 (1.AIST)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A309-2]Determination of Nonlinear Constants of Lithium Tantalate Single Crystal

〇Yasuo Cho1, Ryo Nakagawa2, Toshimaro Yoneda2, Takeshi Nakao2, Mamoru Ikeura2 (1.Tohoku University, 2.Murata Manufacturing Co., Ltd)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A309-3]Observation of ferroelectric domain and its temperature dependence of ferroelectric HfO2 using laser-photoelectron emission microscopy

〇(D)Yuki Itoya1, Hirokazu Fujiwara2, Cedric Bareille3,4, Shik Shin4,5, Toshiyuki Taniuchi3,4, Masaharu Kobayashi1,6 (1.Univ. Tokyo IIS, 2.ISSP, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.d. lab)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A309-4]Remnant polarization enhancement in HfO2 thin films induced by polarization switching under mechanical tensile strain and its relaxation after removal of the strain

〇Tatsuya Inoue1, Takashi Onaya2, Koji Kita1,2 (1.Dept. of Mater. Eng., Univ. of Tokyo, 2.Dept. of Adv. Mater. Sci., Univ. of Tokyo)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A309-5]Crystal structures of ALD deposited HfO2 thin films on Si substrate

〇Ryuto Ichikawa1, Keigo Naito1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-A309-6]Epitaxial Stabilization of Ferroelectric Hf0.5Zr0.5O2 via Interfacial Reconstruction

〇Yufan Shen1, Mitsutaka Haruta1, Lin I-Ching1, Daisuke Kan1, Yuichi Shimakawa1 (1.Kyoto Univ. ICR)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish PresentationHighlighted Presentation

[20p-A309-7]Epitaxial Growth of PZT Thin Films on HfO2-Buffered Si Substrates via Spin-coating Technique

〇(D)Haining Li1, Takeshi Kijima1,2, Risa Kataoka1, Hiroyasu Yamahara1, Hitoshi Tabata1, Munetoshi Seki1 (1.Univ. of Tokyo, 2.Gaianixx Inc.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A309-8]Investigation of Sr(Zr,Ti)O3 Buffer Layers for Controlling Domain Structure of Ferroelectric Thin Films.

〇(DC)Keisuke Ishihama1, Kazuki Okamoto1, Masanori Kodera2,3, Tomohide Morikawa1, Takao Shimizu1,4, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Tokyo Tech. MCES, 3.AIST, 4.NIMS)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A309-9]Crystal structure analysis of (100) BiFeO3 epitaxial thin films fabricated by combinatorial sputtering method on Si substrates

〇Kohei Takaki1, Sengsavang Aphayvong1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-A309-10]Electromechanical characteristics of epitaxial BiFeO3 thin film on Si substrate fabricated by combinatorial sputtering method

〇(D)Aphayvong Sengsavang1, Kohei Takaki1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-A309-11]Magnetic phase transition induced modulation of ferroelectric properties in hexagonal RFeO3 (R = Tb, Ho) system

〇Yaoming Liu1, Binjie Chen1, Yosuke Hamasaki2, Hiromichi Ohta3, Tsukasa Katayama3,4 (1.IST-Hokkaido U., 2.NDA, 3.RIES-Hokkaido U., 4.JST-PRESTO)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-A309-12]In-situ monitoring of growth process for YbMnO3 correlated ferroelectric films

〇Sodai Ichikawa1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-A309-13]Lattice parameter control of (Ba,Sr)RuO3 bottom electrode layer toward enhancement of piezoelectric property of ferroelectric thin films

〇(M1C)Nagi Chujo1, Kohei Kawade1, Masahito Yoshino1, Takanori Nagasaki1, Tomoaki Yamada1,2 (1.Nagoya Univ., 2.Tokyo Tech.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[20p-A309-14]Domain architecture engineering of tensile-strained (PbxSr1-x)TiO3 thin films

〇Xueyou Yuan1, Yuto Ota1, Daichi Ichinose2, Takao Shimizu3, Kazuki Okamoto1,2, Yoshitaka Ehara4, Masahito Yoshino1, Takanori Nagasaki1, Hiroshi Funakubo2, Tomoaki Yamada1,2 (1.Nagoya Univ., 2.Tokyo Tech., 3.NIMS, 4.NDA)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A309-15]Characterization of crystal structure under application of an electric field for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films

〇(M2)MIKI NAKAHATA1, KAZUKI OKAMOTO1, KEISUKE ISHIHAMA1, TOMOAKI YAMADA2,3, HIROSHI FUNAKUBO1 (1.Tokyo Tech., 2.Nagoya Univ., 3.MDX Tokyo Tech.)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[20p-A309-16]Influence of thickness ratio of Pb(Zr,Ti)O3 superlattice thin films

〇Genki Harada1, Kiyotaka Tanaka1, SangHyo Kweon1, Isaku Kanno1 (1.Kobe Univ.)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[20p-A309-17]Exfoliation of single c-domain Pb(Zr,Ti)O3 films on CaF2(001) substrates using sacrificial water-soluble layers

Kazuhiro Takahashi1, Masahito Yoshino1, Takanori Nagasaki1, 〇Tomoaki Yamada1,2 (1.Nagoya Univ., 2.Tokyo Tech.)
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[20p-A309-18]Development and Performance Verification of PZT/PZT Piezoelectric Film Microphones

〇(M1C)Ryota Ono1, Tadashi Sakata2, Naoki Zaito1, Makiko Kobayashi1 (1.Kumamoto Univ., 2.Kumamoto College Technol.)
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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A309-19]Ferroelectricity of Ce and Mn co-doped ZnO thin films

〇Rei Ogawa1, Kiyotaka Tanaka1, Hideaki Adachi1, Isaku Kanno1 (1.Kobe Univ.)
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