[20p-A310-1~12] CS.1 Code-sharing Session of 2.3 & 7.4

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A310-7] Substrate cooling dependence of metal etching using reactive gas adsorption and O2-GCIB

〇Kohdai Sakuta¹, Masaya Takeuchi¹, Noriaki Toyoda¹ (1.Hyogo Univ.)

Keywords:

Gas Cluster Ion Beam,Reactive etching

Metal etching is possible by gas-cluster ion beam irradiation and adsorption of reactive gases, but in previous studies, the substrate temperature was at room temperature. Therefore, by cooling or heating the substrate, surface adsorption and desorption reactions can be controlled, and etching with high selectivity and high aspect ratio is expected. In my talk, I will report the temperature dependence of Pt and Co using acetic acid gas and O2-GCIB, and the temperature dependence of surface states using AFM and XPS.