[20p-A501-1~12] 7.2 Applications and technologies of electron beams

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A501-2] Fabrication of Oxygen Resistant Protective Layers on Graphene-oxide-semiconductor Electron Emission Devices and its Emission Properties Evaluation

〇Ren Mutsukawa^1,2, Yoshinori Takao¹, Hiromasa Murata², Masayoshi Nagao², Katsuhisa Murakami² (1.YNU, 2.AIST)

Keywords:

Graphene-oxide-semiconductor Electron Emission Devices