The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation7 Beam Technology and Nanofabrication : 7.2 Applications and technologies of electron beams

[20p-A501-1~12]7.2 Applications and technologies of electron beams

Wed. Sep 20, 2023 1:00 PM - 4:15 PM JST
Wed. Sep 20, 2023 4:00 AM - 7:15 AM UTC
A501 (KJ Hall)
Katsuhisa Murakami(AIST), Fujio Wakaya(Osaka Univ.)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A501-1]Filter Effects on Energy in Graphene-Insulator-Semiconductor-Structured Electron Source

〇Takao Koichi1, Shogo Kawashima1, Satoshi Abo1, Fujio Wakaya1, Masayoshi Nagao2, Katsuhisa Murakami2 (1.Osaka Univ., 2.AIST)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A501-2]Fabrication of Oxygen Resistant Protective Layers on Graphene-oxide-semiconductor Electron Emission Devices and its Emission Properties Evaluation

〇Ren Mutsukawa1,2, Yoshinori Takao1, Hiromasa Murata2, Masayoshi Nagao2, Katsuhisa Murakami2 (1.YNU, 2.AIST)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A501-3]Operation of FEA-based Two-Stage Amplifier for Vacuum Integrated Circuits

〇Ryosuke Hori1, Tomoaki Osumi1,2, Masayoshi Nagao2, Hiromasa Murata2, Yasuhito Gotoh1 (1.Kyoto Univ., 2.AIST)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A501-4]Mechanism of Field-Emission Angular Distribution (FAD) from Single Molecules

〇Yoichi Yamada1, Ryohei Tsuruta1, Yutaro Ono1, Tomohiro Nobeyama1, Masahiro Sasaki1 (1.Tsukuba Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A501-5]Stable Field-Emission Current from Tungsten Carbide Tip

〇Ryohei Tsuruta1, Shunsuke Yanagi1, Yoichi Yamada1 (1.Univ. Tsukuba)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A501-6]Spin polarization of field emitter with a Co/Pt nano protruded structure with respect to emission current

〇Keitaro Miyata1, Tatsuo Iwata1, Shigekazu Nagai1 (1.Mie Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A501-7]Shift in Energy Distribution of Field Emitted Electrons from High-Tc Superconductor Bi2212

〇Haruto Obitsu1, Tatsuo Iwata1, Koichi Hata1, Shigekazu Nagai1 (1.Mie Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-A501-8]Field emission from tungsten coated with Ga liquid metal

〇Rikuto Oda1,2, Yoichiro Neo1,2, Jonghyun Moon1,2 (1.Grad. Sch. of Eng. Shizuoka Univ., 2.RIE,Shizuoka Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A501-9]Fabrication of plasmonic crystal photocathode using transfer molding method

〇Toya Kishimoto1, Yoichiro Neo1,2, Jonghyun Moon1,2 (1.Shizuoka Univ., 2.RIE,Shizuoka Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A501-10]Comparative studies of electron emission characterization of InGaN photocathodes with different threading dislocation density

〇(D)Mikiya Idei1, Daiki Sato2, Atsushi Koizumi2, Tomohiro Nishitani2,3, Yoshio Honda3, Hiroshi Amano3 (1.Nagoya Univ., 2.Photo electron Soul, 3.IMaSS Nagoya Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[20p-A501-11]Laser-assisted Electron Emission from GOS-type Electron Source

〇Hidetaka Shimawaki1, Masayoshi Nagao2, Katsuhisa Murakami2 (1.Hachinohe Inst. Technol., 2.AIST)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-A501-12]Electron emission from graphene/p-Si Schottky junction

〇Katsuhisa Murakami1, Hiromasa Murata1, Masayoshi Nagao1 (1.AIST)
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