[20p-B101-1~16] 15.4 III-V-group nitride crystals

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-B101-6] Fabrication and characterization of BGaN diodes for operation in harsh environments

〇ryohei kudou¹, Tatsuhiro Sakurai¹, Seiya Kawasaki², Tetsuichi Kishishita³, Yoshinori Sakurai⁴, Hiroshi Yashima⁴, Takahiro Makino⁵, Takeshi Ohshima⁵, Yoshio Honda⁶, Hiroshi Amano⁶, Yoku Inoue¹, Toru Aoki⁷, Takayuki Nakano^1,7 (1.Shizuoka Univ., 2.Nagoya Univ., 3.KEK, 4.KURNS., 5.QST, 6.IMass Nagoya Univ., 7.R.I.E. Shizuoka Univ.)

Keywords:

BGaN,MOVPE