Session Details
[20p-B101-1~16]15.4 III-V-group nitride crystals
Wed. Sep 20, 2023 1:30 PM - 6:00 PM JST
Wed. Sep 20, 2023 4:30 AM - 9:00 AM UTC
Wed. Sep 20, 2023 4:30 AM - 9:00 AM UTC
B101 (Civic Auditorium)
Kazunobu Kojima(Osaka Univ.), Kohei Ueno(Univ. of Tokyo), Takao Oto(Yamagata Univ.)
[20p-B101-1]Growth of Cu3N Films by Mist CVD with Ethylenediamine
〇(M2)Shogo Yoshida1, Kazuyo Omura2, Hiroki Nagai1, Takeyoshi Onuma1, Tomohiro Yamaguchi1, Naoya Masahashi2, Tohru Honda1 (1.Kogakuin Univ., 2.IMR, Tohoku Univ.)
[20p-B101-2]Growth mechanism of c-BN phase in magnetron sputtering growth
〇Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
[20p-B101-3]Effects of AlN template polarity on BN grown by MOVPE.
〇(M2)Yuto Oishi1, Shiyu Xiao1, Kenjiro Uesugi2,3, Toru Akiyama1, Hideto Miyake1 (1.Mie Univ., 2.Sch. of RIS, 3.ORIP)
[20p-B101-4]Spatially resolved cathodoluminescence studies of graphitic BN segments formed in hexagonal BN epilayers grown by CVD using carbon-free precursors
〇Shigefusa Chichibu1, Naoki Umehara2, Kazuhiko Hara2, Kohei Shima1 (1.IMRAM-Tohoku Univ., 2.RIE, Shizuoka Univ)
[20p-B101-5]Optical Characteristics for BGaN films using Tilt Polishing Process
〇Ryoya Ozeki1, Daisuke Nakamura1, Ryohei Kudo1, Tetsu Ito1,3, Kohei Shima2, Shigefusa Chichibu2, Takayuki Nakano1,3 (1.Shizuoka Univ., 2.Tohoku Univ., 3.R.I.E.Shizuoka Univ.)
[20p-B101-6]Fabrication and characterization of BGaN diodes for operation in harsh environments
〇ryohei kudou1, Tatsuhiro Sakurai1, Seiya Kawasaki2, Tetsuichi Kishishita3, Yoshinori Sakurai4, Hiroshi Yashima4, Takahiro Makino5, Takeshi Ohshima5, Yoshio Honda6, Hiroshi Amano6, Yoku Inoue1, Toru Aoki7, Takayuki Nakano1,7 (1.Shizuoka Univ., 2.Nagoya Univ., 3.KEK, 4.KURNS., 5.QST, 6.IMass Nagoya Univ., 7.R.I.E. Shizuoka Univ.)
[20p-B101-7]Fabrication and evaluation of neutron detectors using BGaN growth on Si substrates and QST substrate
〇(M2)Shun Nishikawa1, Yusaku Hashimoto1, Seiya Kawasaki2, Genichiro Wakabayashi3, Yoshio Honda4, Hiroshi Amano4, Norikazu Ito5, Taketoshi Tanaka5, Ken Nakahara5, Yoku Inoue1, Toru Aoki6, Takayuki Nakano1,6 (1.Shizuoka Univ, 2.Nagoya Univ, 3.Kindai Univ, 4.IMaSS Nagoya Univ, 5.ROHM, 6.R.I.E. Shizuoka Univ)
[20p-B101-8]Highly Efficient Light Emissions from InGaN/GaN Quantum Wells with Dielectric Thin Films and Metallic Nanostructures
〇Koichi Okamoto1, Seiya Kaito1, Yuki Kamei1, Kenta Mitoda1, Kosuke Fujioka1, Tetsuya Matsuyama1, Kenji Wada1, Mitsuru Funato2, Yoichi Kawakami2 (1.Osaka Metro. Univ., 2.Kyoto Univ.)
[20p-B101-9]Red emission enhancement and its characterizations from honeycomb InGaN nanocolumns by introducing Ag-based plasmonic crystals
〇Ryoma Shirotori1, Jumpei Yamada2,3, Koichi Okamoto5, Rie Togashi3,4, Katsumi Kishino3, Takao Oto1 (1.Yamagata Univ., 2.Keio Univ., 3.Sophia Nanotech., 4.Sophia Univ., 5.Osaka Metro. Univ.)
[20p-B101-10]Development of InGaN photonics using topological structure
〇Masataka Imura1, Liwen Sang1, Yoshihiko Takeda1, Tadaaki Nagao1, Yasuo Koide1, Keiji Nakatsugawa1, Toshikaze Kariyado1, Xiao Hu1 (1.NIMS)
[20p-B101-11]Top-down fabrication of group III nitride nanowires
〇Kouta Tateno1,2, Masato Takiguchi1,2, Satoshi Sasaki1, Kazuaki Ebata1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL, 2.NTT NPC)
[20p-B101-12]Emission Characteristics of InGaN/GaN Nanocolumns Grown by Nanotemplate Selective Area Growth through Controlled Underlying-n-GaN Top-Shape
〇Shunsuke Kudo1, Kenya Yoshimura1, Rie Togashi1,2, Katsumi Kishino1,2 (1.Sophia Univ., 2.Sophia Nanotech.)
[20p-B101-13]Emission characteristics of GaInN/GaN-based multiple quantum shell LEDs with different emission areas
〇(M2)Souma Inaba1, Weifang Lu2, Shima Ayaka1, Ii Shiori1, Takahashi Mizuki1, Yamanaka Yuki1, Hattori Yuta1, Kubota Kosei1, Kamiyama Satoshi1, Takeuchi Tetsuya1, Iwaya Motoaki1 (1.Meijou Univ., 2.Xiamen Univ.)
[20p-B101-14]Growth and optical properties of red GaInN multi-quantum shells on n-GaInN hexagonal nanopyramids
〇Ayaka Shima1, Lu Weifang2, Mizuki Takahashi1, Yuki Yamanaka1, Soma Inaba1, Shiori Ii1, Yuta Hattori1, Kosei Kubota1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ., 2.Xiamen Univ.)
[20p-B101-15]Optimization of in situ activation annealing conditions for tunnel junction layers of quantum-shell GaN-based LDs
〇Mizuki Takahashi1, Yuki Yamanaka1, Shiori Ii1, Ayaka Shima1, Soma Inaba1, Kosei Kubota1, Yuta Hattori1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ.)
[20p-B101-16]Optical properties of n-GaN buried multi-quantum-shell LDs with facet coating
〇Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Ayaka Shima1, Soma Inaba1, Kosei Kubota1, Yuta Hattori1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2 (1.Meijo Univ., 2.NGK Insulators,LTD.)