Presentation Information

[20p-B202-16]H content dependence of critical current density in NdFeAs(O,H) and the fabrication of its artificial grain boundaries

〇Takafumi Hatano1, Hiroya Imanaka1, Hiroto Hibino1, Kazumasa Iida2,3, Hiroshi Ikuta1 (1.Nagoya Univ., 2.Nihon Univ., 3.JST-CREST)

Keywords:

iron based superconductors,thin films,grain boundary junction

NdFeAsO exhibits a high superconducting transition temperature above 50 K by substituting F/H at the O site. Recently, we have prepared high-quality single-crystal thin films of NdFeAs(O,H). Our recent experiments revealed that the H-substituted sample, which corresponds to a carrier doping beyond the solubility limit of the F-substituted sample, shows a critical current density Jc higher than them of the F-substituted samples. In this talk, the H content dependence of Jc will be shown, and the fabrication of artificial grain boundaries in H-substituted thin films will be reported.