Presentation Information
[20p-C501-2]Estimation of spin drift velocity and spin mobility in the absence of effective magnetic field
due to Rashba-type SOI in n-type silicon spin MOSFET
〇Hajime Inoue1, Koike Hayato2, Ryo Ohshima1, Yuichiro Ando1, Shiraishi Masashi1 (1.Kyoto Univ., 2.TDK corp.)
Keywords:
Silicon,Rashba SOI,spin drift velocity
A Si Spin MOSFET is expected to be available for spin-based reconfigurable logic circuits and nonvolatile memory, and it is important to quantitatively and accurately estimate spin drift velocity vs and spin mobility μs of a Si-based spin MOSFET for its practical applications.Since the effective magnetic field Beff due to synthetic Rashba-type SOI influences spin precession, the previous estimation methods to estimate vs and μs using the Hanle-type spin precession (Hanle) measurements are thought to be inaccurate because of in sufficient suppression of the synthetic Rashba field. In this study, we established a precise estimation method of and by suppressing the Beff due to synthetic Rashba-type SOI under an application of a suitable gate voltage Vg to the Si channel.the electric field dependence of was measured by changing I in the L3T Hanle measurement to estimate vs and μs. The results were nicely explained by relationship represented as vs = μsE, and μs was estimated about 72 cm2/V・s. We have successfully established precise estimation methods of vs and μs in a Si spin MOSFET in absence of the Beff due to synthetic Rashba-type SOI by applying . The detail will be discussed in the presentation.