Session Details

[20p-C501-1~14]10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

Wed. Sep 20, 2023 1:30 PM - 5:30 PM JST
Wed. Sep 20, 2023 4:30 AM - 8:30 AM UTC
C501 (Int'l Ctr.)
Shinobu Ohya(Univ. of Tokyo), Pham Nam Hai(Tokyo Tech), Hikari Shinya(Univ. Tokyo)

[20p-C501-1]Conductive Nanocarbon Ohmic Electrode and Evaluation of Spin Injection into Spin Valve Devices Utilizing Single Crystal Diamond

〇Atsushi Watatani1, Kenta Maki1, Sreenath Mylo Valappil1, Ken-ichiro Sakai2, Oomagari Shinya3, Tsuyoshi Yoshitake1 (1.Kyushu Univ., 2.NIT, Kurume College., 3.AIST)

[20p-C501-2]Estimation of spin drift velocity and spin mobility in the absence of effective magnetic field
due to Rashba-type SOI in n-type silicon spin MOSFET

〇Hajime Inoue1, Koike Hayato2, Ryo Ohshima1, Yuichiro Ando1, Shiraishi Masashi1 (1.Kyoto Univ., 2.TDK corp.)

[20p-C501-3]Low-temperature annealing effect on spin transport in lateral spin valve devices with Co-based Heusler alloys/Ge heterostructures

〇Michihiro Yamada1,2,3, Naoyuki Sugiyama4, Kazuaki Sumi5, Kenji Oki5, Kentarou Sawano6, Kohei Hamaya1,3,5 (1.CSRN, Osaka Univ., 2.JST-PRESTO, 3.OTRI, Osaka Univ., 4.Toray Research Center, 5.GSES, Osaka Univ., 6.Tokyo City Univ.)

[20p-C501-4]Influence of the Ru composition change on the spin-to-charge conversion in SrRu1-xO3 films

〇(D)Shingo Kaneta1, Yuki K. Wakabayashi2, Yoshitaka Taniyasu2, Hideki Yamamoto2, Yoshiharu Krockenberger2, Hikari Shinya1,3, Masaaki Tanaka1,3, Shinobu Ohya1,3 (1.The Univ. of Tokyo, 2.NTT-BRL, 3.CSRN, The Univ. of Tokyo)

[20p-C501-5]Coherent imprint of higher-order structured photons to higher-order electron spins

〇Shota Akei1, Sota Sato1, Toshiki Matsumoto1, Jun Ishihara2, Satoshi Iba3, Katsuhiko Miyamoto1, Takashige Omatsu1, Ken Morita1 (1.Chiba Univ., 2.Tohoku Univ., 3.RCECT, AIST)

[20p-C501-6]Observation of high-mobility quantum transport and topological band structure
of α-Sn / Fe heterostructures

〇Soichiro Fukuoka1, Tomoki Hotta1, Le Duc Anh1,2,3, Takahiro Chiba4, Yohei Kota5, Masaaki Tanaka1,3 (1.EEIS, Univ. of Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. of Tokyo, 4.FRIS, Tohoku Univ., 5.NIT, Fukushima Coll.)

[20p-C501-7]Superconductivity in an α-Sn thin film

〇Tomoki Hotta1, Anh Le Duc1,2, Masaaki Tanaka1,3 (1.EEIS, Univ. Tokyo, 2.PRESTO, JST, 3.CSRN, Univ. Tokyo)

[20p-C501-8]Robust spin Hall effect in non-stoichiometric topological semimetal YPtBi thin films

〇Takanori Shirokura1, Pham Nam Hai1 (1.Tokyo Tech)

[20p-C501-9]Annealing temperature effects on spin orbit torque in YPtBi topological semimetal and perpendicularly magnetized Co/Pt multilayers

〇Sho Kagami1, Takanori Shirokura1, Pham Nam Hai1 (1.Titech)

[20p-C501-10]Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory

〇(D)HOANGHUY HO1, R. Zhang1, T. Shirokura1, S. Takahashi2, Y. Hirayama2, Nam Hai Pham1 (1.Tokyo Tech., 2.Samsung Japan Corp.)

[20p-C501-11]Magnetic-field and current-direction dependence of the superconducting diode effect in superconductor Sn wires embedded in a Dirac semimetal thin film

〇Keita Ishihara1, Le Duc Anh1,2,3, Tomoki Hotta1, Masaaki Tanaka1,3 (1.Graduate School of Electrical Engineering and Information System, The University of Tokyo, 2.PRESTO, JST, 3.Center for Spintronics Research Network)

[20p-C501-12]Current direction dependent transverse signal in topological insulator/ferromagnet heterostructures

〇(M1)Yuxiang Mao1, Masamitsu Hayashi1, Masashi Kawaguchi1, Shunzhen Wang1 (1.The Univ. of Tokyo)

[20p-C501-13]Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam

〇(M2)Kohdai Inagaki1, Keita Ishihara1, Tomoki Hotta1, Yuichi Seki1, Takahito Takeda1, Tatsuhiro Ishida2, Daiki Ootsuki2, Ikuto Kawasaki3, Shinichi Fujimori3, Masaaki Tanaka1,4, Anh Le Duc1,4,5, Masaki Kobayashi1,4 (1.Univ. of Tokyo, 2.Kyoto Univ, 3.JAEA, 4.CSRN, Univ. of Tokyo, 5.PRESTO)

[20p-C501-14]A Noble-Metal-Free Spintronic System with Ferromagnetic Topological Surface State of FeSi above Room Temperature

〇Tomohiro Hori1,2, Naoya Kanazawa1, Motoaki Hirayama2,3, Kohei Fujiwara4, Atsushi Tsukazaki4, Masashi Kawasaki2,3, Yoshinori Tokura2,3,5 (1.IIS, Univ. of Tokyo, 2.Dept. of Appl. Phys., Univ. of Tokyo, 3.RIKEN CEMS, 4.IMR, Tohoku Univ., 5.Tokyo college, Univ. of Tokyo)