[20p-D902-1~15] 12.3 Functional Materials and Novel Devices

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[20p-D902-14] Self-oscillation observed in the molecular memristor (Et-4BrT)[Ni(dmit)₂]₂

〇Yugo Oshima¹, Taishi Takenobu², Jiang Pu³, Keisuke Ishiguro², Reizo Kato¹, Hiroshi M. Yamamoto⁴, Tetsuro Kusamoto⁵ (1.RIKEN, 2.Nagoya Univ., 3.Tokyo Tech., 4.IMS, 5.Osaka Univ.)

Keywords:

Memristor,Nonlinear Transport,Oscillation

Memristors, which are passive devices proposed by L. O. Chua, are expected to be used in the next-generation memories or quantum computers since it does not require power to hold its information and can also be used as an analog type memory since its resistance depends on the electric charge. Recently, we have reported that one of the Bilayer-type molecular materials,(Et-4BrT)[Ni(dmit)₂]_2, shows the expected I-V characteristics for memristor. In our talk, we will report that this molecular memristor can be used as an oscillator, and its oscillation mechanism will be discussed.