Presentation Information

[20p-P06-3]Effect of NaF doping on conductivity change of p-type tin sulfide thin films by light irradiation

〇Yuki Nakamura¹, Sena Ito¹, Hiroto Oomae¹ (1.NIT, Kushiro College)

Keywords:

semiconductor,tin sulfide,light absober

Tin sulfide (SnS) is a group II-VI p-type semiconductor composed of naturally abundant non-toxic elements. It has an optical absorption coefficient of over 10⁴ cm^-1 and a band gap of 1.3 eV and is expected to be used as a light absorbing material for solar cells. In this presentation, we report on the preparation of NaF-doped SnS thin films and the study of the change in conductivity with NaF content and photo irradiation.

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