[21a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[21a-A304-1] High-accuracy charge transfer using silicon single-hole pumps

〇Gento Yamahata¹, Akira Fujiwara¹ (1.NTT BRL)

Keywords:

single electron,silicon,quantum dot

High-accuracy operation with good yield of single-electron pumps is required for current standard application. Compared with electrons, holes have a higher effective mass and therefore have higher energy selectivity in the transmittance of the tunnel barrier, which is expected to lead to high-accuracy charge transfer. In this study, we found a high energy selectivity from the temperature dependence of a device using a single hole, and observed a high-accuracy operation in which an error rate exceeding 10^-8 can be predicted theoretically at 2-GHz operation. This is an important result that shows the possibility of current standard applications with charge pumps using holes.