The 84th JSAP Autumn Meeting 2023
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21a-A304-1~11]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Thu. Sep 21, 2023 9:00 AM - 12:00 PM JST
Thu. Sep 21, 2023 12:00 AM - 3:00 AM UTC
A304 (KJ Hall)
Masahiro Hori(静大)
PDF DownloadDownload PDF
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[21a-A304-1]High-accuracy charge transfer using silicon single-hole pumps

〇Gento Yamahata1, Akira Fujiwara1 (1.NTT BRL)
PDF DownloadDownload PDF
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A304-2]Bayesian estimation approach for error rate characterization of single electron transport

〇Go Sakamoto1, Kazuto Takahashi1, Chihiro Kondo1, Raisei Mizokuchi1, Tetsuo Kodera1, Jun Yoneda1 (1.Tokyo Tech)
PDF DownloadDownload PDF
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[21a-A304-3]Individually Controlled Characteristics of 3D Stacked Silicon Quantum Dots

〇(D)Junoh Kim1, Tomoko Mizutani1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1,3, Toshiro Hiramoto1 (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab, Univ. of Tokyo)
PDF DownloadDownload PDF
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A304-4]Measurement of quantum dots via a silicon interposer toward spin qubits integration

〇Tokio Futaya1, Raisei Mizokuchi1, Misato Taguchi2, Takuji Miki2, Makoto Nagata2, Jun Yoneda1, Tetsuo Kodera1 (1.Tokyo Tech., 2.Kobe Univ.)
PDF DownloadDownload PDF
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A304-5]Assessment of parasitic components and effect on impedance matching in RF reflectometry

〇(M2)Ryo Matsuda1, Jun Kamioka1, Raisei Mizokuchi1, Jun Yoneda1, Tetsuo Kodera1 (1.Titech)
PDF DownloadDownload PDF
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[21a-A304-6]Valley splitting by extended zone effective mass approximation incorporating strain

〇Jinichiro Noborisaka1, Toshiaki Hayashi1, Akira Fujiwara1, Katsuhiko Nishiguchi1 (1.NTT BRL)
PDF DownloadDownload PDF
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[21a-A304-7]First-principles calculations on valley splitting in a Si quantum well

〇Toshiaki Hayashi1, Hiroyuki Kageshima2, Jinichiro Noborisaka1, Satoshi Fujiwara1, Katsuhiko Nishiguchi1 (1.NTT BRL, 2.Shimane Univ.)
PDF DownloadDownload PDF
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A304-8]Characteristics of pn junction diode at cryogenic temperature

〇(M1)Keito Yoshinaga1, Tomohisa Miyao1, Takahisa Tanaka2, Ken Uchida1 (1.The Univ. of Tokyo, 2.Keio Univ.)
PDF DownloadDownload PDF
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[21a-A304-9]Temperature-Driven Changes of Random Telegraph Noise Sources in Bulk MOSFETs

〇Takumi Inaba1, Hiroshi Oka1, Hidehiro Asai1, Hiroshi Fuketa1, Shota Iizuka1, Kimihiko Kato1, Shunsuke Shitakata1, Koichi Fukuda1, Takahiro Mori1 (1.AIST)
PDF DownloadDownload PDF
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[21a-A304-10]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (8) -Recombination process (I)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
PDF DownloadDownload PDF
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[21a-A304-11]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (9) -Recombination process (II)-

〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
PDF DownloadDownload PDF
Back to Category List