[21a-A307-1~10] 6.3 Oxide electronics

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A307-1] Growth and characterization of N-doped VO₂ thin films for the thermochromic and smart windows by the mist chemical vapor deposition.

〇(M1)Taisei Kano¹, Yuta Arata¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:

smart windows,metal-insulator transition,mist CVD

Vanadium dioxide (VO₂) has attracted considerable attention after F. J. Morin reported that it exhibits a metal-insulator transition(MIT) at around 67^oC. The MITs of VO₂ have been demonstrated to occur by various stimuli, such as heating, applying voltage, and light, and MIT significantly changes optical and electrical properties, but the transition temperature is slightly higher than room temperature.
In this study, we doped nitrogen(N) into VO₂ thin films to decrease the transition temperature to 30^oC, which is close to room temperature, by mist CVD and investigated the impact of N into thin films on the MIT temperatures.