[21a-A307-1~10] 6.3 Oxide electronics

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A307-4] Relationship between time dependence of Schottky parameters and doping concentration in the resistive relaxation dynamics of Pt/Nb:SrTiO₃ junctions

〇Hayato Nakamura¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

Keywords:

resistance relaxation,doping concentration,Schottky

In this study, we investigated the resistance relaxation phenomenon in the interface-type resistive switching memory of Pt/Nb-doped SrTiO₃. We developed a convenient method to obtain the time dependence of Schottky parameters (SPs) during the dynamics of the relaxation process following resistance switching. Using this measurement method, we elucidated the relationship between the time dependence of SPs and the Nb doping concentration during the resistance relaxation dynamics.