[21a-A308-1~10] CS.6 Code-sharing Session of 3.10 & 3.14

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[21a-A308-3] All optical switching operation of etched nanowire integrated III-V Si hybrid photonic crystals cavity

〇Masato Takiguchi^1,2, Takuro FujiiFujii^1,3, Naotomo Takemura^1,2, Hisashi Sumikura^1,2, Akihiko Shinya^1,2, Shinji Matsuo^1,3, Masaya Notomi^1,2,4 (1.NTT NPC, 2.NTT BRL, 3.NTT DTL, 4.Tokyo Tech)

Keywords:

photonic crystal,nanowire,optical switching

In this study, we fabricated compound semiconductor nanowires precisely by an dry etching process and integrated them in trenches of Si photonic crystals to fabricate III-V Si hybrid photonic crystal cvities with a small air gap. If nanostructures are fabricated by etching, arbitrary shapes can be fabricated, and the non-radiative recombination rate can be controlled by the device size, therefore it can be avairable for high-speed optical switches. Nanowires fabricated by etching were introduced into photonic crystals using the transfer printing method, a micromanipulator, and an atomic force microscope. The operation of the all-optical switch was evaluated by irradiating the fs laser pulse light with the probe light (CW light) introduced.