[21a-A308-1~10] CS.6 Code-sharing Session of 3.10 & 3.14

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[21a-A308-5] The cavity formation by selectively loaded Ge₂Sb₂Te₅ film on photonic crystal waveguides

〇Takahiro Uemura^1,2, Hisashi Chiba^1,2, Taiki Yoda^1,2, Yuto Moritake¹, Yusuke Tanaka², Eiichi Kuramochi^2,3, Masaaki Ono^2,3, Masaya Notomi^1,2,3 (1.TokyoTech, 2.NTT BRL, 3.NTT NPC)

Keywords:

photonic crystal,cavity formation,phase-change material

Ge2Sb2Te5 (GST), a well-known phase change material widely used in industry, has two stable phases at room temperature: an amorphous phase and a crystalline phase, with a large refractive index contrast between the two phases. In our previous study, we reported the tuning of the resonant wavelength and Q-factor by loading GST on the scale of a few hundred nm into a two-dimensional point-defect photonic crystal cavity. In this study, we report the cavity formation by GST loading on a photonic crystal waveguide.