[21a-A308-1~10] CS.6 Code-sharing Session of 3.10 & 3.14

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21a-A308-6] Monolithic integration of InP/Si hybrid optical power monitor and MOS optical phase shifter

〇Tomohiro Akazawa¹, Kei Sumita¹, Stephane Monfray², Frederic Boeuf², Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo, 2.STMicroelectronics)

Keywords:

photonics,photodetector,photonic integrated circuit

Programmable photonic integrated circuits (PICs) are promising for applications such as computation and sensing. To reconfigure PICs for specific purposes, accurate control of phase shift values at each phase shifter is necessary. However, fabrication variations or environmental temperature change inevitably induce phase errors into a PIC. Thus, the phase values need to be accurately calibrated by optical power monitoring and feedback control. In this work, we propose a transparent in-line optical power monitor using an InP-based phototransistor. The detection of light down to -44 dBm was achieved with <0.25 dB insertion loss owing to the trap-mediated photodetection and its amplification by phototransistor. Furthermore, we monolithically integrated the phototransistor with an InP/Si hybrid MOS phase shifter, demonstrating the direct optical power monitoring of the output light intensity of the MZI over two orders of magnitude. This result is promising for energy-efficient PICs using III-V/Si hybrid integration.