[21a-A501-1~9] 9.3 Nanoelectronics

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[21a-A501-9] Observation of energy transport in an aF DRAM under white noise input

〇Kensaku Chida¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

Keywords:

Silicon nanodevices,Electron counting statistics,Energy transport

We have estimated the energy transport in an attofarad DRAM under white noise input by using electron counting statistics (ECS). We found that the energy transport incrases exponentially as a function of amplitude of white noise. This study shows that ECS as a useful tool to study energy transport at the nanometer scale.