Presentation Information
[21a-B204-2]Atomic-scale analysis of room temperature bond interface between LiNbO3/SiO2 and demonstration of LNOI/Si ultra-high-speed optical modulator
〇Seigo Murakami1, Moritomo Takeru1, Yamaguchi Yuya2, Sakamoto Takahide3, Takigawa Ryo1 (1.Kyushu Univ., 2.NICT, 3.Tokyo Metropolitan Univ.)
Keywords:
optical modulator
We have developed heterogeneous wafer-level integration of LNOI optical modulator on well-developed Si platform for next generated highly functional photonics. In this study, we investigated the room-temperature wafer bonding of LiNbO3 and thermally oxided Si using activated Si atomic layer, and its atomic-scale bond interface formation. In addition, using our room temperature bonding method, LNOI/Si high-speed optical modulator operating at 100 GHz was demonstrated.