[21a-P02-1~10] 6.1 Ferroelectric thin films

[21a-P02-1] Improvements of Electrical Characteristics in Mist CVD-Derived Hf_0.5Zr_0.5O₂ Ferroelectric Thin Film

〇Sho Tanaka¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:

Ferroelectric

In 2011, ferroelectricity of hafnia-based thin films was reported, and non-perovskite ferroelectric materials have been attracting attention. Our group has been preparing hafnia-based ferroelectric thin films by mist CVD method. Although this method enables low-cost and high-throughput growth, a leakage current remains a concern. In this study, nitrogen plasma treatment at each interface was investigated. As a result, leakage current was reduced by about two orders of magnitude and hysteresis loops were improved, which are better than those previously reported.