[21a-P03-1~16] 6.4 Thin films and New materials

[21a-P03-10] Control of the conducting channel thickness of Co₃Sn₂S₂ films using an electric-double-layer device structure

〇Kohei Fujiwara¹, Junya Ikeda¹, Shun Ito¹, Atsushi Tsukazaki^1,2 (1.IMR, Tohoku Univ., 2.CSIS, Tohoku Univ.)

Keywords:

Electric-double-layer devices,Weyl semimetals