[21p-A307-1~23] 6.3 Oxide electronics

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[21p-A307-22] Atomic layer deposition of tin oxide thin films using a novel liquid precursor, Sn(EtCp)₂.

〇Fumikazu Mizutani¹, Makoto Mizui¹, Nobutaka Takahashi¹, Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

Keywords:

atomic layer deposition,tin oxide,new precursor

We synthesized Sn(EtCp)₂, a divalent tin complex, and confirmed that it can be used for ALD. In ALD using divalent raw materials, it is expected that SnO or SnO₂ can be intentionally produced by using water or oxygen plasma as an oxidizing gas. Here, we report the results of a study on atomic layer deposition of SnO₂ using oxygen plasma.