[21p-B101-1~16] 15.4 III-V-group nitride crystals

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B101-12] RF-MBE growth of InAlN thermoelectric thin film

〇Shota Hattori¹, Araki Tsutomu¹, Deura Momoko² (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:

InAlN,MBE,Thermoelectric