The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[21p-B101-1~16]15.4 III-V-group nitride crystals

Thu. Sep 21, 2023 1:30 PM - 6:00 PM JST
Thu. Sep 21, 2023 4:30 AM - 9:00 AM UTC
B101 (Civic Auditorium)
Atsushi Kobayashi(Tokyo Univ. of Sci.), Kanako Shojiki(Kyoto Univ.), Yusuke Hayashi(Osaka Univ.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-B101-1]Optical characteristics of heavily Ge-doped n-GaN grown via sputtering

〇Aiko Naito1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[21p-B101-2]Growth and characterization of Ge-doped AlGaN grown via sputtering

〇Aiko Naito1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[21p-B101-3]Low forward voltage operation of degenerate n-type GaN-based tunnel junction contact LED prepared by sputtering

〇Jeongeui Hwang1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[21p-B101-4]Comparison of Ohmic Contacts of N-polar GaN HEMT using n+-GaN Regrown by MOCVD and Sputtering

〇Takahide Hirasaki1, Akihiro Hayasaka1, Masaya Okada1, Isao Makabe1, Yukihiro Tsuji1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[21p-B101-5]Study of GaN thin film deposition using ECR plasma sputtering method

〇HIRONORI TORII1,2, Kozue Tanaka1, Shinsuke Matsui2 (1.JSW AFTY Co., 2.Chiba Institute of Technology)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[21p-B101-6]Control of In content in InGaN on ScAlMgO4 substrates grown using RF-MBE

〇Momoko Deura1, Yuta Kubo2, Yasuhiro Yamada2, Takashi Fujii2, Tsutomu Araki2 (1.R-GIRO, 2.Ritsumeikan Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[21p-B101-7]Microstructural characterization of InGaN grown by RF-MBE on ScAlMgO4

〇Yasuhiro Yamada1, Yuta Kubo1, Yuichi Wada1, Momoko Deura2, Takashi Fujii1, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[21p-B101-8]Highly efficient red emission of GaInN/GaInN MQWs grown on (10-11) face nanocolumns

〇Hiromi Akagawa1, Jumpei Yamada2, Tomohiro Yamaguchi1, Rie Togashi2,3, Takeyoshi Onuma1, Ichirou Nomura2,3, Tohru Honda1, Katsumi Kishino2 (1.Kogakuin Univ., 2.Sophia Nanotech Center, 3.Sophia Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[21p-B101-9]InGaN/GaN nanocolumns on Si(111) substrates grown by nanotemplate selective area growth

〇Kota Hoshino1, Kenya Yoshimura1, Koji Takahashi1, Shunsuke Kudo1, Jumpei Yamada2, Rie Togashi1,2, Katsumi Kishino2 (1.Sophia Univ., 2.Sophia Nanotech.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[21p-B101-10]RF-MBE growth of GaInN with insertion of GaInN buffer layer on GaN using in-situ XRD-RSM
- Growth temperature dependence of GaInN-

〇(M2)Jo Takeuchi1, Takuo Sasaki2, Go Okuma1, Haruka Yokoyama1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1, Yasushi Nanishi3 (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[21p-B101-11]Epitaxial growth and evaluation of properties of InGaN thermoelectric thin film

〇Momoko Deura1, Shota Hattori2, Tsutomu Araki2 (1.R-GIRO, 2.Ritsumeikan Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B101-12]RF-MBE growth of InAlN thermoelectric thin film

〇Shota Hattori1, Araki Tsutomu1, Deura Momoko2 (1.Ritsumeikan Univ., 2.R-GIRO)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B101-13]Investigation of a-plane GaN microchannel epitaxy on r-plane sapphire substrate using graphene nano-pattern mask

〇Yokoi Ryoya1, Yuta Yanase1, Kohei Osamura1, Takahiro Maruyama1, Shigeya Naritsuka1 (1.Meijo Univ.)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B101-14]Single crystal growth of GaN thin film using μCLS method

〇(M1)Kazushi Okamoto1, Yoshida Kouki1, Yeh Wenchang1 (1.Shimane Univ. Graduate School of Natural Sciences)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[21p-B101-15]Al/N Ratio Dependence of Low Temperature AlN Growth by RF-MBE

〇Yuma Kawakami1, Tsutomu Araki1, Momoko Deura2 (1.Ritsumeikan Univ., 2.R-GIRO)
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-B101-16]Preliminary remote epitaxy of AlN on AlN template substrate

〇(M2)Kohei Osamura1, Ryoya Yokoi1, Takahiro Maruyama1, Shigeya Naritsuka1 (1.Meijo Univ.)
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