[21p-C501-1~19] 10.3 Spin devices, magnetic memories and storages

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[21p-C501-17] Evaluation of thermal stability in L1₀ ordered MnAl nanodots

〇(M2)Takanobu Shinoda^1,2, Yutaro Takeuchi³, Butsurin Jinnai³, Junta Igarashi¹, Yuma Sato^1,2, Shunsuke Fukami^1,2,3,4,5,6, Hideo Ohno^1,2,3,4,5 (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ., 5.CIES, Tohoku Univ., 6.InaRIS)

Keywords:

STT-MRAM

As the commercialization of spin-transfer torque magnetoresistive random access memories (STT-MRAMs) with perpendicular-easy-axis magnetic tunnel junctions (MTJs) progresses, material development for MTJs has become increasingly significant for advanced generations. In recent years, Mn-based ferromagnetic alloys have been intensively investigated due to their favorable switching and data-retention properties for STT-MRAMs. In particular, L1₀-ordered MnAl is a prime candidate because it has high spin polarization, low magnetization, low Gilbert damping, and large magnetocrystalline anisotropy. Recently, epitaxial growth of nanometer-thin L1₀-MnAl film with B2-CoAl layer was demonstrated. To utilize L1₀-MnAl in MTJs, it is necessary to investigate the data-retention performance of MnAl. In this study, we measure the thermal stability of MnAl nanodots with various thicknesses