講演情報
[21p-C501-17]Evaluation of thermal stability in L10 ordered MnAl nanodots
〇(M2)Takanobu Shinoda1,2, Yutaro Takeuchi3, Butsurin Jinnai3, Junta Igarashi1, Yuma Sato1,2, Shunsuke Fukami1,2,3,4,5,6, Hideo Ohno1,2,3,4,5 (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ., 5.CIES, Tohoku Univ., 6.InaRIS)
キーワード：
STT-MRAM
As the commercialization of spin-transfer torque magnetoresistive random access memories (STT-MRAMs) with perpendicular-easy-axis magnetic tunnel junctions (MTJs) progresses, material development for MTJs has become increasingly significant for advanced generations. In recent years, Mn-based ferromagnetic alloys have been intensively investigated due to their favorable switching and data-retention properties for STT-MRAMs. In particular, L10-ordered MnAl is a prime candidate because it has high spin polarization, low magnetization, low Gilbert damping, and large magnetocrystalline anisotropy. Recently, epitaxial growth of nanometer-thin L10-MnAl film with B2-CoAl layer was demonstrated. To utilize L10-MnAl in MTJs, it is necessary to investigate the data-retention performance of MnAl. In this study, we measure the thermal stability of MnAl nanodots with various thicknesses