[21p-C501-1~19] 10.3 Spin devices, magnetic memories and storages

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[21p-C501-7] Quantum-annealing approach for design of magnetic tunnel junction: Case study of inverse-spinel MgGa₂O₄ tunnel barrier

〇Kenji Nawa^1,2, Tsuyoshi Suzuki³, Keisuke Masuda², Shu Tanaka^4,5, Yoshio miura^2,6 (1.Mie Univ., 2.NIMS, 3.TDK Corp., 4.Keio Univ., 5.WPI-Bio2Q, Keio Univ., 6.CSRN, Osaka Univ.)

Keywords:

quantum annealing,materials informatics,tunnel magnetoresistance effect

Materials informatics in spintronics field offers an efficient search for the best condition to improve device performances, for example, tunnel magnetoresistance (TMR) and resistive-area product (RA), from huge search spaces. Quantum-annealing (QA) approach is recently reported as a combinatorial optimization method. In this work, we proposed a QA approach combined with machine learning and first-principles calculations and applied to cation-disordered inverse-spinel oxides, MgGa₂O₄, for developing magnetic tunnel junction showing high TMR and low RA.