講演情報
[21p-C501-7]Quantum-annealing approach for design of magnetic tunnel junction: Case study of inverse-spinel MgGa2O4 tunnel barrier
〇Kenji Nawa1,2, Tsuyoshi Suzuki3, Keisuke Masuda2, Shu Tanaka4,5, Yoshio miura2,6 (1.Mie Univ., 2.NIMS, 3.TDK Corp., 4.Keio Univ., 5.WPI-Bio2Q, Keio Univ., 6.CSRN, Osaka Univ.)
キーワード：
quantum annealing、materials informatics、tunnel magnetoresistance effect
Materials informatics in spintronics field offers an efficient search for the best condition to improve device performances, for example, tunnel magnetoresistance (TMR) and resistive-area product (RA), from huge search spaces. Quantum-annealing (QA) approach is recently reported as a combinatorial optimization method. In this work, we proposed a QA approach combined with machine learning and first-principles calculations and applied to cation-disordered inverse-spinel oxides, MgGa2O4, for developing magnetic tunnel junction showing high TMR and low RA.