[21p-D902-1~17] 12.7 Biomedical Engineering and Biochips

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[21p-D902-4] Estimation of the Depletion Layer Thickness in Silicon Nanowire-Based Biosensors for Elucidating the Fundamental of High Sensitivity Detection

〇Hui Zhang¹, Yawei Qiu¹, Fumiya Osawa¹, Noriyasu Ohshima², Taira Kajisa³, Toshiya Sakata⁴, Takashi Izumi^2,5, Hayato Sone¹ (1.Gunma Univ. Graduate School of Science and Technology, 2.Gunma Univ. Graduate School of Medicine, 3.Toyo Univ., 4.The Univ. of Tokyo, 5.Teikyo Heisei Univ.)

Keywords:

Si nanowire biosensor,high sensitivity,estimation of the depletion layer thickness

The Si nanowire (NW) biosensor utilizes the principle of field-effect transistors, enabling it to detect low concentrations of biomolecules. However, the factors contributing to the high sensitivity of SiNW biosensors and their detection limits have not been elucidated. In this study, we aimed to challenge the detection limits of the sensor by narrowing the SiNW down to a width of 10 nm scale and measured the current changes in SiNW sensors with different widths to estimate the thickness of the depletion region induced by the tiny charges of the biomolecules. As a result, we revealed the factors contributing to the high sensitivity of the sensor and its detection limits.