[21p-D903-1~16] 6.4 Thin films and New materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-D903-4] Fabrication of ZrN_xH_y Films by Alternating-target Deposition Method and Metal-Insulator Transition

〇Daichi Miyazaki¹, Akira Ohtomo¹, Takuto Soma¹ (1.Tokyo Tech)

Keywords:

Nitride hydride,Alternating-target deposition,Pulsed-laser deposition

Hydride nitride is one of the mixed anion compounds, and interesting properties such as hydride conduction of Ba₂NH and catalytic activity of Ca₂NH for ammonia synthesis have been reported in the I and II group metals. We have focused on the high affinity of Zr metal to hydrogen and prepared ZrH_y (0 ≤ y ≤ 3.3) thin films by pulsed laser deposition (PLD) method. In this report, we attempted to control the composition of ZrN_xH_y thin films.