[21p-P01-1~14] 8.1 Plasma production and diagnostics

[21p-P01-8] Measurement of Incident Radical and Positive Ion Species to Substrates in RF Tetraethoxysilane Plasmas at Low Pressure

〇Toshizo Nara¹, Tatuya Takiguchi¹, Yuto Asano¹, Akinori Oda¹ (1.Chiba Institute of Technology)

Keywords:

plasma,mass spectrometry

Plasma-assisted chemical vapor deposition is used to deposit silicon dioxide films used in semiconductors, and tetraethoxysilane (TEOS) gas is used as the source gas. However, there have been few reports on deposition methods using TEOS plasma focusing on the fundamental properties of TEOS plasma. In this study, we measured the particle species incident on the substrate from TEOS plasma diluted with various inert gases by mass spectrometry. The results are reported.