[21p-P04-1~4] 15.1 Bulk crystal growth

[21p-P04-1] Quantitative analysis on occurrence of constitutional supercooling in heavily B doped Si
crystal growth by the Czochralski method

〇Toshinori Taishi¹, Yuki Fukui¹ (1.Shinshu Univ.)

Keywords:

silicon,constitutional supercooling

Quantitative analysis on occurrence of constitutional supercooling in heavily B doped Si crystal growth by the Czochralski method was investigated using Hurle's discriminant equation. A heavily B-doped Si crystal grown were cut vertically, and occurrence of constitutional supercooling was evaluated by divided regions of the wafer after measuring B concentration in the crystal and preferential etching.