[21p-P04-1~4] 15.1 Bulk crystal growth

[21p-P04-3] Growth and characterization of large single crystals of [In_0.7Sn_0.15Zn_0.15]GaO₃(ZnO)₁ using the optical floating zone method

〇Ryotaro Kokai¹, Tadahito Inoue¹, Yuto Uruma¹, Naoki Kase¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. of Sci)

Keywords:

IGZO,transparent conductive oxide,single crystal

Large single crystals of [In_0.7Sn_0.15Zn_0.15]GaO₃(ZnO)₁, in which In³⁺ in InGaZnO₄, a type of TCO, is partially replaced by Sn⁴⁺ and Zn²⁺, have been successfully grown. The crystal growth was performed using the OFZ method, a type of liquid-phase method. I measured the electrical conductivity and mobility of this single crystal and compared it with InGaZnO₄ to discuss the effect of Sn⁴⁺ and Zn²⁺ on conduction.