[21p-P05-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21p-P05-3] Circularly polarized light emission properties of multilayered InGaAs quantum dots with growth interruption of GaAs spacer layers

〇naoto kondo¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:

multilayered quantum dot,Circularly polarized photoluminescence,growth interruption