Session Details
[21p-P05-1~10]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Thu. Sep 21, 2023 1:30 PM - 3:30 PM JST
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
Thu. Sep 21, 2023 4:30 AM - 6:30 AM UTC
P05 (KJ Hall)
[21p-P05-1]Effect of Low As Flux Annealing to the 2D-3D Transition of SML Nanostructures
〇(PC)Ronel Intal Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
[21p-P05-2]Bi-layer InAs quantum dots with 1.4-µm-band emissions for moisture measurement applications
〇Koki Okuno1, Tatsuki Yokota1, Yuuki Carl Hodson1, Nobuhiko Ozaki1 (1.Wakayama Univ.)
[21p-P05-3]Circularly polarized light emission properties of multilayered InGaAs quantum dots with growth interruption of GaAs spacer layers
〇naoto kondo1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
[21p-P05-4]Size control of nano-pit formed using Ga oxide (2)
〇(M2)Genki Ono1, Kanji Iizuka1 (1.NIT)
[21p-P05-5]Analysis of band-edge fluctuation based on optical measurements for low-temperature-grown InyGa1-yAs1-xBix
〇Tatsuyoshi Arakawa1, Tatsuya Umenishi1, Seiya Saito1, Yusaku Kozai1, Yoriko Tominaga1, Mitsuki Yukimune2, Fumitaro Ishikawa3 (1.Grad. School of Adv. Sci. Eng., Hiroshima Univ., 2.Grad. School of Sci. Eng., Ehime Univ., 3.RC for Integr. Quantum Electron., Hokkaido Univ.)
[21p-P05-6]Photoluminescence study of InSb layers grown on Germanium and GaAs substrates by molecular beam epitaxy
〇Shinichirou Gozu1 (1.AIST)
[21p-P05-7]Photoluminescence Energy of Stacked InSb Quantum Dots Calculated Using Effective Mass Approximation
〇Yuto Onoda1, Syunki Kameoka1, Emin Kuwabara1, Hirotsugu Mita1, Hiroki Fujishiro1, Satoshi Endoh1 (1.TUS)
[21p-P05-8]InAsxSb1-x thin film growth using LT-InSb on GaAs substrate and its evaluation
〇hirotsugu mita1, Keisuke Koseki1, Emin Kuwabara1, Yuto Onoda1, Satoshi Endoh1, Hiroki Fujishiro1 (1.TUS)
[21p-P05-9]Investigation of growth conditions of InSb1-xNx thin films by DC sputtering method
〇Sachie Fujikawa1, Hiroyuki Yaguchi1 (1.Saitama Univ.)
[21p-P05-10]MBE Growth of GaAs on Diamond Substrate
〇(M1C)Shouya Kiuchi1, Oshima Ryuji1, Kanji Iizuka1 (1.NIT)